mpsh11/mmbth11, rev. b npn rf transistor this device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 a to 10 ma range to 300 mhz, and low frequency drift common- base vhf oscillator applications with high output levels for driving fet mixers. sourced from process 47. absolute maximum ratings* ta = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 25 v v cbo collector-base voltage 30 v v ebo emitter-base voltage 3.0 v i c collector current - continuous 50 ma t j , t st g operating and storage junction temperature range -55 to +150 c * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units mpsh11 *mmbth11 p d total device dissipation derate above 25 c 350 2.8 225 1.8 mw mw / c r jc thermal resistance, junction to case 125 c/w r ja thermal resistance, junction to ambient 357 556 c/w * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." mpsh11 c e b to-92 mmbth11 c b e sot-23 mark: 3g ? 2002 fairchild semiconductor corporation mpsh11 / mmbth11
3 mpsh11/mmbth11, rev. b electrical characteristics ta = 25c unless otherwise noted symbol parameter test conditions min max units off characteristics v ( br ) ceo collector-emitter sustaining voltage* i c = 1.0 ma, i b = 0 25 v v ( br ) cbo collector-base breakdown voltage i c = 100 a, i e = 0 30 v v ( br ) ebo emitter-base breakdown voltage i e = 10 a, i c = 0 3.0 v i cbo collector cutoff current v cb = 25 v, i e = 0 100 na i ebo emitter cutoff current v eb = 2.0 v, i c = 0 100 na on characteristics h fe dc current gain i c = 4.0 ma, v ce = 10 v 60 v ce( sat ) collector-emitter saturation voltage i c = 4.0 ma, i b = 0.4 ma 0.5 v v be( on ) base-emitter on voltage i c = 4.0 ma, v ce = 10 v 0.95 v small signal characteristics * pulse test: pulse width 300 s, duty cycle 2.0% f t current gain - bandwidth product i c = 4.0 ma, v ce = 10 v, f = 100 mhz 650 mhz c cb collector-base capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 0.7 pf c rb common-base feedback capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 0.6 0.9 pf rb ? c collector base time constant i c = 4.0 ma, v cb = 10 v, f = 31.8 mhz 9.0 ps typical characteristics npn rf transistor (continued) mpsh11 / mmbth11 collector- emitter saturation voltage vs collector current 0.1 1 10 20 30 0.0 5 0.1 0.1 5 0.2 i - collector current (ma) v - collector-emitter voltage (v) cesat c = 1 0 125 c - 40 c 25 ? ? ? ? 0 . 01 0. 1 1 10 1 00 0 50 100 150 200 250 300 i - co l l ec to r cu rr en t (m a) h - dc pulsed current gain fe c v = 5v ce 125 c - 40 c 25 ? ? ? ?
mpsh11/mmbth11, rev. b typical characteristics (continued) capacitance vs reverse bias voltage 0.1 1 10 50 0 0.6 1.2 1.8 2.4 3 reverse bias voltage (v) capacitance (pf) f = 1.0 mhz c cb c ibo contours of constant gain bandwidth product (f ) 0.1 1 10 100 0.1 1 10 50 i - collector current (ma) v - collector voltage (v) ce c t = 25 c a t o 100 mhz 200 mhz 300 mhz 40 0 mhz 50 0 mhz 60 0 mhz 70 0 mhz 80 0 mhz 90 0 mhz 1000 mhz power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 temperature ( c) p - power dissipation (mw) d sot-23 to-92 collector cut-off current vs ambient temperat ure 25 50 75 100 125 150 0.1 1 10 t - ambient temperature ( c) i - collector current (na) a v = 30v cb cbo base-emitt er sat uration voltage vs collector current 0.1 1 10 20 30 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter voltag e (v) besat 125 c - 40 c 25 ? ? ? ? = 10 base-emitt er on voltage vs collector current 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) be(o n) c v = 5.0v ce 125 c - 40 c 25 ? ? ? ? (continued)
3 mpsh11/mmbth11, rev. b common emitter y parameters input admittance vs collector current 0 4 8 121620 0 2 4 6 8 10 12 14 i - collector current (ma) y - input admittance (mmhos) ie c v = 15v ce f = 45 mhz b ie g ie input admittance vs collector current 0246810 0 4 8 12 16 20 24 i - collector current (ma) y - input admittance (mmhos) ie c v = 10v ce f = 200 mhz b ie g ie input admittance vs collector voltage 048121620 0 4 8 12 16 20 24 28 v - collector voltage y - input admittance (mmhos) ie ce i = 7.0 ma c f = 200 mhz b ie g ie input admittance vs frequency 50 100 200 500 1000 0 4 8 12 16 20 f - frequency (mhz) y - input admittance (mmhos) ie i = 7.0 ma c b ie g ie v = 15v ce forward transfer admittance vs collector current 0 4 8 12 16 20 24 1 10 100 200 500 i - collector current (ma) y -forward trans admittance (mmhos) fe -b fe v = 15v ce c f = 45 mhz g fe forward transfer admittance vs collector current 0246810 0 20 40 60 80 100 120 i - collector current (ma) y -forward trans admittance (mmhos) fe -b fe v = 10v ce c f = 200 mhz g fe mpsh11 / mmbth11 npn rf transistor (continued)
mpsh11/mmbth11, rev. b common emitter y parameters (continued) forward transfer admittance vs collector voltage 048121620 0 20 40 60 80 100 120 140 v - collector voltage (v) y -forward trans admittance (mmhos) fe -b fe ce g fe i = 7.0 ma c f = 45 mhz forward transfer admittance vs frequency 50 100 200 500 1000 0 20 40 60 80 100 120 140 f - frequency (mhz) y -forward trans admittance (mmhos) fe i = 7.0 ma c g fe v = 15v ce -b fe reverse transfer admittance vs collector current 0 4 8 12 16 20 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 i - collector current (ma) y -reverse trans admittance (mmhos) re -g re c v = 15v ce f = 45 mhz -b re reverse transfer admittance vs collector current 0246810 0 0.1 0.2 0.3 0.4 0.5 0.6 i - collector current (ma) y -reverse trans admittance (mmhos) re -g re c v = 10v ce f = 200 mhz -b re reverse transfer admittance vs collector voltage 0 2 4 6 8 10 12 14 16 18 20 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 0.36 0.4 v - collector voltage (v) y -reverse trans admittance (mmhos) re -g re ce -b re i = 7.0 ma c f = 45 mhz reverse transfer admittance vs frequency 50 100 200 500 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 f - frequency (mhz) y -reverse trans admittance (mmhos) re -g re -b re i = 7.0 ma c v = 15v ce mpsh11 / mmbth11 npn rf transistor (continued)
3 mpsh11/mmbth11, rev. b common emitter y parameters (continued) output admittance vs collector current 0 4 8 12 16 20 24 1 10 100 1000 i - collector current (ma) y - output admittance (mmhos) oe c v = 15v ce f = 45 mhz b oe g oe output admittance vs collector current 0246810 0.1 0.2 0.5 1 2 5 i - collector current (ma) y - output admittance (mmhos) oe c v = 10v ce f = 200 mhz b oe g oe output admittance vs collector voltage 0 4 8 12 16 20 24 10 100 1000 10000 v - collector voltage (v) y - output admittance (mmhos) oe ce b oe g oe i = 7.0 ma c f = 45 mhz output admittance vs frequency 50 100 200 500 1000 10 100 1000 10000 f - frequency (mhz) y - output admittance (mmhos) oe i = 7.0 ma c v = 15v ce b oe g oe power gain and noise figure vs collector current 0246810 0 5 10 15 20 25 30 35 i - collector current (ma) power gain and noise figure (db) c v = 12v cc f = 200 mhz nf pg fig. 2 conversion gain vs collector current 012345 18 20 22 24 26 28 i - collector current (ma) c - conversion gain (db) c f = 45 mhz if ge f = 200 mhz o f = 245 mhz lo v = 15v ce fig. 1 mpsh11 / mmbth11 npn rf transistor (continued)
mpsh11/mmbth11, rev. b test circuits figure 1: unneutralized 200 mhz pg and nf test circuit 200 mhz output into 50 ? 200 mhz input v cc = 12 v 1000 pf 1000 pf 0.8-10 pf r s r l 100 pf 1000 pf 1000 pf 2.2 k ? ? ? ? ? 390 ? ? ? ? ? 270 ? ? ? ? ? l1 l2 v bb l1 - ohmite z-235 rfc l2 - l6 turns no. 14 wire, 1 inch l x 1/4 inch id tapped 1 1/2 turns from cold side mpsh11 / mmbth11 npn rf transistor (continued)
3 mpsh11/mmbth11, rev. b test circuits (continued) 1000 pf 1000 pf 0.002 f 4.0-30 pf 1000 pf v cc = 12 v 2.2 k ? ? ? ? ? 1/2 w r.f. beads 50 ? ? ? ? ? input 50 ? ? ? ? ? output v agc 390 ? ? ? ? ? 1/2 w 2k ? ? ? ? ? t1 270 ? ? ? ? ? 1/2 w t1 - q3 toroid 4:1 ratio 8 turns pri. 2 turns sec. } no. 22 wire figure 2: 45 mhz power gain circuit 2 00 mhz output into 50 ? rf in lo in 2.0 pf 300 pf 1000 pf l 1 47 k ? ? ? ? ? 245 mhz input into 50 ? v ce v bb t 1 1.1 pf 20pf 1000 pf 45 mhz output into 50 ? v ce = 15 v figure 3: 200 mhz conversion gain test circuit l1 - ohmite rfc z235 t1 - primary 5 turns no. 34 wire 1/4 inch diameter. secondary runs no. 34 wire close wound over a q100 core (10.7 mhz). when terminated on secondary side with 50 ? primary measures 1.5 k, -25 pf. mpsh11 / mmbth11 npn rf transistor (continued)
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